Gate-lastprocess

由李品輝著作·2013—...gatelastMOSFETcomparedtogatefirstMOSFET.Table5.2showsthecomparisonofGen-MOSFETsusinggatelastprocessandgatefirstprocess.Table5.2(a) ...,Thekeydifferencebetweenthegate-firstandgate-lastprocessiswhenthemetalgatesareformed....gate-lastprocessformsthegateafterthesource/drains.,由TYHoffmann著作·被引用31次—SimilartoIntel's45nmprocess,thisapproachisbasedonahigh-kfirstschemethough,...

參考資訊如下
電信工程研究所

由 李品輝 著作 · 2013 — ... gate last MOSFET compared to gate first MOSFET. Table 5.2 shows the comparison of Ge n-MOSFETs using gate last process and gate first process. Table 5.2 (a) ...

Tracing Samsung's Road to 14nm

The key difference between the gate-first and gate-last process is when the metal gates are formed. ... gate-last process forms the gate after the source/drains.

Integrating high-k metal gates: gate-first or gate-last?

由 TY Hoffmann 著作 · 被引用 31 次 — Similar to Intel's 45nm process, this approach is based on a high-k first scheme though, so unless significant progress is being made to improve the thermal ...

台積電28nm製程節點轉向Gate

2011年12月19日 — Intel在其發布的《45nm High-k+Metal Gate Strain-Enhanced Transistors》中對Gate-last和Gate-first的工步區別對比說明：Gat.

IEDM 2009: HKMG gate-first vs gate

In a gate-last process, the high-k material is deposited dummy gates are ... Companies that have reported on a gate-first process include IBM, UMC, Panasonic, ...

Self-aligned gate-last process for quantum

Integrating high-k metal gates: gate-first or gate

由 TY Hoffmann 著作 · 被引用 31 次 — Similar to Intel's 45nm process, this approach is based on a high-k first scheme though, so unless significant progress is being made to improve the thermal ...

Gate First vs. Last

2011年11月14日 — So here's the deal then: gate-last solves the gate stack issue, but it comes with an area penalty. If you can stick with gate-first, then you ...

Schematic of the gate-last self

This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiNx/AlN/GaN MISHEMTs. The devices featured in situ grown SiNx ...